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Solutions for Success

Products

ST 100 filling a 45 nm wide, 730 nm deep trench (lined with a thin layer of SiN), cured at 900 Cfor 1 hour, and subjected to 200:1 DHF for 10 seconds. )

ST Series

Application

Medium and high temperature applications, STI, PMD

Properties

Excellent high aspect ratio feature fill, SiO2 like film after high temperature cure in steam or slightly oxidizing ambient; low etch rate in dilute HF post cure