ST 100 filling a 45 nm wide, 730 nm deep trench (lined with a thin layer of SiN), cured at 900 Cfor 1 hour, and subjected to 200:1 DHF for 10 seconds. )
ST Series
Application
Medium and high temperature applications, STI, PMD
Properties
Excellent high aspect ratio feature fill, SiO2 like film after high temperature cure in steam or slightly oxidizing ambient; low etch rate in dilute HF post cure